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SILICON POWER
TRANSISTOR
2SD1588
NPN SILICON EPITAXIAL
TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• Mold package that does not require an insulating board or
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PACKAGE DRAWING (UNIT: mm)
insulation bushing
• Large current capacity in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.
5 V MAX.
(@5 A) • Ideal for use in ramp drivers or inductance drivers • Complementary
transistor: 2SB1097
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power diss...