Part Number
|
8N60B |
Manufacturer
|
IXYS Corporation |
Description
|
IXGT28N60B |
Published
|
Nov 3, 2008 |
Detailed Description
|
Ultra-Low VCE(sat) IGBT with Diode
IXGH 28N60B IXGT 28N60B
VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V
Preliminary data...
|
Datasheet
|
8N60B
|
Overview
Ultra-Low VCE(sat) IGBT with Diode
IXGH 28N60B IXGT 28N60B
VCES = 600 V = 40 A IC25 VCE(sat) = 2.
0 V
Preliminary data
Symbol com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.
8 VCES 150 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C Nm/lb.
in.
°C g g
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G C E G = Gate, E = Emitter, TAB C = Collector, TAB = Collector
Mounting torque (M3) TO-247
1.
...
Similar Datasheet