Part Number
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MX29L1611G |
Manufacturer
|
Macronix International |
Description
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CMOS SINGLE VOLTAGE FLASH EEPROM |
Published
|
Nov 17, 2008 |
Detailed Description
|
ADVANCED INFORMATION
MX29L1611G / MX29L1611*
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
FEATURES
3.3V ± ...
|
Datasheet
|
MX29L1611G
|
Overview
ADVANCED INFORMATION
MX29L1611G / MX29L1611*
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
FEATURES
3.
3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns Fast page access time: 30ns (Only for 29L1611PC-90/ com 10/12) • Sector erase architecture - 32 equal sectors of 64k bytes each - Sector erase time: 200ms typical • Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip - Automatically programs and verifies data at specified addresses • • • • • • Status Register feature for detection of program or erase cycle completion • Low VCC ...
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