ADVANCED INFORMATION MX29L3211 32M-BIT [4M x 8/2M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • 3.
3V ± 10% write, erase and read • Endurance: 10,000 cycles • Fast random access time: 100ns/120ns • Fast pagemode access time: 50ns www.
DataSheet4U.
com • Page access depth: 16 bytes/8 words • Sector erase architecture - 32 equal sectors of 64K word each - Sector erase time: 200ms typical • Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses • Status Register feature for detection of program or erase cycle completion • Low VCC write inhib...

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