AO6706 N-Channel Enhancement Mode Field Effect
Transistor with
Schottky Diode
General Description
The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
A
Schottky diode is com provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.
Standard Product AO6706 is Pb-free (meets ROHS & Sony 259 specifications).
AO6706L is a Green Product ordering option.
AO6706 and AO6706L are electrically identical.
Features
VDS (V) = 30V ID = 3.
6A (V GS = 10V) RDS(ON) 65m Ω (VGS = 10V) RDS(ON) 75m Ω (VGS = 4.
5V) RDS(ON) 160m Ω (VGS = 2.
5V)
SCHOTTKY VDS (V) = 20V, I F = 1A, VF0.
5V@0.
5A
D TS...