AO6802 Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
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Features
VDS (V) = 30V ID = 3.
1 A (VGS = 10V) RDS(ON) 75mΩ (VGS = 10V) RDS(ON) 115mΩ (VGS = 4.
5V)
The AO6802 uses advanced trench technology to excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AO6802 is Pb-free (meets ROHS & Sony 259 specifications).
AO6802L is a Green Product ordering option.
AO6802 and AO6802L are electrically identical.
TSOP6 Top View G1 S2 G2 D1 S1 D2
D1
D2
1 6 2 5 3 4
G1 S1
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source V...