AO6810 Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
com provide
Features
VDS (V) = 30V ID = 3.
1 A (VGS = 10V) RDS(ON) 77mΩ (VGS = 10V) RDS(ON) 120mΩ (VGS = 4.
5V)
The AO6810 uses advanced trench technology to excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AO6810 is Pb-free (meets ROHS & Sony 259 specifications).
TSOP6 Top View G1 S2 G2 D1 S1 D2
D1
D2
1 6 2 5 3 4
G1 S1
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissip...