STB40NE03L-20
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE
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s s s s
V DSS
R DS(on)
ID
s
TYPICAL RDS(on) = 0.
014 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.
The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND ...