2SK2352

2SK2350 : 2SK2350 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2350 Switching Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.26 Ω (typ.) z High forward transfer admittance : |Yfs| = 8 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2).

2SK2350 : ·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8.5 A ID(puls) Pulsed Drain Current 34 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to .

2SK2351 : ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 6 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK2351 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CO.

2SK2352 : ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 6 A ID(puls) Pulsed Drain Current 24 A Ptot Total Dissipation@TC=25℃ 45 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case.

2SK2353 : The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3. 3.2 ±0.2 2.7 ±0.2 4.5 ±0.2 FEATURES • Low On-Resistance 2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 670 pF TYP. • High Avalanche Capability Ratings • Isolate TO-220 Package QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 15.0 ±0.3 4 ±0.2 0.7 ±0.1 2.54 1.3 ±0.2 1.5 ±0.2 2.54 13.

2SK2354 : The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3. 3.2 ±0.2 2.7 ±0.2 4.5 ±0.2 FEATURES • Low On-Resistance 2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 670 pF TYP. • High Avalanche Capability Ratings • Isolate TO-220 Package QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 15.0 ±0.3 4 ±0.2 0.7 ±0.1 2.54 1.3 ±0.2 1.5 ±0.2 2.54 13.

2SK2355 : The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 3.6 ±0.2 10.0 4.8 MAX. 1.3 ±0.2 5.9 MIN. 1 2 3 • Low On-Resistance 2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) 4 12.7 MIN. 15.5 MAX. FEATURES 6.0 MAX. • Low Ciss Ciss = 670 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2355/2356) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperatu.

2SK2355-Z : The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 3.6 ±0.2 10.0 4.8 MAX. 1.3 ±0.2 5.9 MIN. 1 2 3 • Low On-Resistance 2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) 4 12.7 MIN. 15.5 MAX. FEATURES 6.0 MAX. • Low Ciss Ciss = 670 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2355/2356) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperatu.

2SK2356 : The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 3.6 ±0.2 10.0 4.8 MAX. 1.3 ±0.2 5.9 MIN. 1 2 3 • Low On-Resistance 2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) 4 12.7 MIN. 15.5 MAX. FEATURES 6.0 MAX. • Low Ciss Ciss = 670 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2355/2356) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperatu.

2SK2356-Z : The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 3.6 ±0.2 10.0 4.8 MAX. 1.3 ±0.2 5.9 MIN. 1 2 3 • Low On-Resistance 2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) 4 12.7 MIN. 15.5 MAX. FEATURES 6.0 MAX. • Low Ciss Ciss = 670 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2355/2356) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperatu.

2SK2357 : The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES • Low On-Resistance 2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A) 15.0 ±0.3 2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A) • Low Ciss Ciss = 1050 pF TYP. • High Avalanche Capability Ratings • Isolate TO-220 Package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (2SK2357/2358) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current.

2SK2358 : The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES • Low On-Resistance 2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A) 15.0 ±0.3 2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A) • Low Ciss Ciss = 1050 pF TYP. • High Avalanche Capability Ratings • Isolate TO-220 Package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (2SK2357/2358) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current.

2SK2359 : The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. applications. 4.8 MAX. 1.3 ± 0.2 FEATURES • Low On-Resistance 2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A) 4 1 2 3 6.0 MAX. • Low Ciss Ciss = 1050 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage(2SK2359/2SK2360) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Chann.