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Wireless Power
Transistor, 33W 1805 - 1880 MHz
Features
l l l l l
PHl819-33
v2.
01 I.
744 (18.
90)-1
NPN Silicon Microwave Power
Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System
225 (5.
72)*.
015 (0.
38)
, I
;48/6.
30) &&y&T
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DataSheet4U.
com
1
*\I
1
f
CqO(6.
35)
Absolute’ Maximum Ratings at 25°C
I Parameter
Collector-EmitterVoltage Collector-EmitterVoltage Emitter-Base Voltage CollectorCurrent Power Dissipation StorageTemperature ) JunctionTemperature Thermal Resistance
I Sym~l VCEO VcE.
s Vem I ‘c PO T c-Fe ) T, 6JC
I
Rating
25 65 3.
0
1 Units
V V
1
225(5.
72)+.
015
(0.
38...