STU6NA90
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
PRELIMINARY DATA TYPE STU6NA90
www.
DataSheet4U.
com s TYPICAL
s s s s s s
V DSS 900 V
R DS(on) 2Ω
ID 5.
8 A
RDS(on) = 1.
5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
1
2
3
The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages.
The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and sav...