Part Number
|
H7P0601DS |
Manufacturer
|
Renesas Technology |
Description
|
Silicon P Channel MOS FET High Speed Power Switching |
Published
|
Nov 20, 2008 |
Detailed Description
|
H7P0601DL, H7P0601DS
Silicon P Channel MOS FET High Speed Power Switching
REJ03G0044-0100Z Rev.1.00 Aug.05.2003
www.Data...
|
Datasheet
|
H7P0601DS
|
Overview
H7P0601DL, H7P0601DS
Silicon P Channel MOS FET High Speed Power Switching
REJ03G0044-0100Z Rev.
1.
00 Aug.
05.
2003
www.
DataSheet4U.
com
Features
• Low on-resistance RDS(on) = 40 mΩ typ.
• Low drive current • 4.
5 V gate drive device can driven from 5 V source
Outline
DPAK-2
D 4
DPAK-S
4
G 1 2 S 1 2 3 3
H7P0601DS
H7P0601DL 1.
Gate 2.
Drain 3.
Source 4.
Drain
Rev.
1.
00, Aug.
05.
2003, page 1 of 10
H7P0601DL, H7P0601DS
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current
www.
DataSheet4U.
com
Symbol VDSS VGSS ID ID (pulse) IDR IAP
Note3 Note3 Note2 Note1
Rating –60 ±20 –20 –80 –20 –12 12.
3 25 150 –55 to +150
Unit V V A A A A...
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