H5N1506P Silicon N Channel MOS FET High Speed Power Switching REJ03G0389-0200 Rev.
2.
00 Jul 03, 2006 Features • Low on-resistance • Low leakage current www.
DataSheet4U.
com • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1.
Gate 2.
Drain (Flange) 3.
Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at ...

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