H5N2003P Silicon N Channel MOS FET High Speed Power Switching REJ03G0235-0100Z Rev.
1.
00 Apr.
09.
2004 Features • Low on-resistance • Low leakage current com • High speed switching Outline TO-3P D G 1.
Gate 2.
Drain (Flange) 3.
Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR...

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