Part Number
|
H5N2004DL |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N Channel MOS FET High Speed Power Switching |
Published
|
Nov 20, 2008 |
Detailed Description
|
H5N2004DL, H5N2004DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2...
|
Datasheet
|
H5N2004DL
|
Overview
H5N2004DL, H5N2004DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1103-0200 (Previous: ADE-208-1372) Rev.
2.
00 Sep 07, 2005
Features
www.
DataSheet4U.
com • Low
• Low on-resistance: R DS (on) = 0.
38 Ω typ.
leakage current: IDSS = 1 µA max (at VDS = 200 V) • High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A) • Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A) • Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4 D 4 1.
Gate 2.
Drain 3.
Source 4.
Drain
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
G 1 2
3 S
1
2
3
Rev.
2.
00 Sep 07, 2005 page 1 of 7
H5N2004DL, H5N2004DS
Abs...
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