H5N2803PF Silicon N Channel MOS FET High Speed Power Switching REJ03G0395-0100 Rev.
1.
00 Aug.
05.
2004 Features • Low on-resistance • Low leakage current www.
DataSheet4U.
com • High speed switching Outline TO-3PFM D G 1 S 1.
Gate 2.
Drain 3.
Source 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID...

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