H7N0603DL, H7N0603DS Silicon N Channel MOS FET High speed power Switching REJ03G0123-0200 Rev.
2.
00 Jan.
26.
2005 Features • Low on - resistance RDS (on) = 11 mΩ typ.
www.
DataSheet4U.
com • Low drive current • Capable of 4.
5 gate drive Outline PRSS0004ZD-B (Previous code: DPAK(L)-2) D 4 PRSS0004ZD-C (Previous code: DPAK-(S)) 4 G 1 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain H7N0603DS S 1 2 3 H7N0603DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%...

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