Part Number
|
H7N0608AB |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N-Channel MOSFET |
Published
|
Nov 20, 2008 |
Detailed Description
|
H7N0608AB
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0143-0100Z Rev.1.00 Oct.30.2003
com...
|
Datasheet
|
H7N0608AB
|
Overview
H7N0608AB
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0143-0100Z Rev.
1.
00 Oct.
30.
2003
com
Features
• Low on-resistance RDS(on) = 6.
0 mΩ typ.
• Low drive current • Available for 4.
5 V gate drive
Outline
TO-220AB
D
G
S
1 2 3
1.
Gate 2.
Drain (Flange) 3.
Source
Rev.
1.
00, Oct.
30.
2003, page 1 of 9
H7N0608AB
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current
com
Symbol VDSS VGSS ID ID (pulse) IDR IAP
Note3 Note1
Ratings 60 ±20 70 280 70 40 137 80 150 –55 to +150
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current Avalanche current Avalanche energy Chann...
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