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Part Number
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MT47H512M4 |
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Manufacturer
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Micron |
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Description
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(MT47HxxxMxx) DDR2 SDRAM |
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Published
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Nov 24, 2008 |
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Detailed Description
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2Gb: x4, x8, x16 DDR2 SDRAM Features
DDR2 SDRAM
MT47H512M4 – 64 Meg x 4 x 8 banks MT47H256M8 – 32 Meg x 8 x 8 banks MT4...
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Datasheet
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MT47H512M4
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Overview
2Gb: x4, x8, x16 DDR2 SDRAM Features
DDR2 SDRAM
MT47H512M4 – 64 Meg x 4 x 8 banks MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Features
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Vdd = +1.
8V ±0.
1V, VddQ = +1.
8V ±0.
1V JEDEC-standard 1.
8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option 4n-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency - 1 tCK Programmable burst lengths: 4 or 8 Adjustable data-output drive strength 64ms, 8,192-cycle refr...
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