Freescale Semiconductor Technical Data
RF Power Field Effect
Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to 235 MHz.
Device is unmatched and is suitable for use in industrial, medical and scientific applications.
• Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.
), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 24 dB Drain Efficiency — 67.
5%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters • CW Operation Capability with Adequate Cooling • Qual...