AO4414A N-Channel Enhancement Mode Field Effect
Transistor
General Description
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Features
VDS (V) = 30V ID = 8.
5A (VGS = 10V) RDS(ON) 26mΩ (VGS = 10V) RDS(ON) 40mΩ (VGS = 4.
5V)
The AO4414A uses advanced trench technology to excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Standard Product AO4414A is Pb-free (meets ROHS & Sony 259 specifications).
AO4414AL is a Green Product ordering option.
AO4414A and AO4414AL are electrically identical.
D S S S G D D D D G
SOIC-8
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