Part Number
|
SiHFI520G |
Manufacturer
|
Vishay Siliconix |
Description
|
Power MOSFET |
Published
|
Dec 8, 2008 |
Detailed Description
|
Power MOSFET
IRFI520G, SiHFI520G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
|
Datasheet
|
SiHFI520G
|
Overview
Power MOSFET
IRFI520G, SiHFI520G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
16 4.
4 7.
7 Single
0.
27
TO-220 FULLPAK
D
G
GDS
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES
• Isolated Package • High Voltage Isolation = 2.
5 kVRMS (t = 60 s;
f = 60 Hz) • Sink to Lead Creepage Distance = 4.
8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistanc...
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