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Part Number
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SiHFIBC30G |
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Manufacturer
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Vishay Siliconix |
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Description
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Power MOSFET |
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Published
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Dec 8, 2008 |
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Detailed Description
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IRFIBC30G, SiHFIBC30G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (n...
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Datasheet
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SiHFIBC30G
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Overview
IRFIBC30G, SiHFIBC30G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
2.
2
31
4.
6
17
Single
D TO-220 FULLPAK
G
GDS
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Isolated Package • High Voltage Isolation = 2.
5 kVRMS (t = 60 s;
f = 60 Hz) • Sink to Lead Creepage Distance = 4.
8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Th...
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