Power MOSFET IRFIZ14G, SiHFIZ14G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.
1 5.
8 Single 0.
20 TO-220 FULLPAK D GDS G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.
5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.
8 mm Available RoHS* COMPLIANT • 175 °C Operating Temperature • Dynamic dv/dt Rating • Low Thermal Resistance • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design...

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