Part Number
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SiHFI830G |
Manufacturer
|
Vishay Siliconix |
Description
|
Power MOSFET |
Published
|
Dec 8, 2008 |
Detailed Description
|
IRFI830G, SiHFI830G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
|
Datasheet
|
SiHFI830G
|
Overview
IRFI830G, SiHFI830G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration www.
DataSheet4U.
com VGS = 10 V 38 5.
0 22 Single
D
FEATURES
500 1.
5
• Isolated Package • High Voltage Isolation = 2.
5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.
8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220 FULLPAK
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating har...
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