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Part Number
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IXFT120N15P |
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Manufacturer
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IXYS Corporation |
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Description
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Polar MOSFETs |
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Published
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Dec 11, 2008 |
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Detailed Description
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Advanced Technical Information
PolarTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast recovery intrinsic diode
...
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Datasheet
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IXFT120N15P
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Overview
Advanced Technical Information
PolarTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast recovery intrinsic diode
IXFH 120N15P IXFT 120N15P
VDSS = 150 V ID25 = 120 A RDS(on) ≤ 17 mΩ ≤ 200 ns trr
com
Symbol VDSS VDGR VGS VGSM ID25
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 10°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C
Maximum Ratings 150 150 ± 20 ± 30 120 75 300 60 50 1.
5 10 600 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A A mJ J V/ns W °C °C °C °C
TO-247AD (IXFH)
G
D
D (TAB) S
ID(RMS) IDM I...
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