28C256T 256K EEPROM (32K x 8-Bit) EEPROM VCC GND DATA INPUTS/OUTPUTS I/O0 - I/O7 OE WE CE OE, CE, and WE LOGIC DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX com ADDRESS INPUTS Y DECODER X DECODER IDENTIFICATION Logic Diagram Memory FEATURES: • RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - 100 Krad (Si), dependent upon space mission • Excellent Single Event Effects: - SELTH LET: 120 MeV/mg/cm2 - SEUTH LET (read mode): 90 MeV/mg/cm2 - SEUTH LET (write mode): 18 MeV/mg/cm2 • Package: - 28 pin RAD-PAK® flat pack - 28 pin RAD-PAK® DIP - JEDEC approved byte wide pinout • High Speed: - 120, 150 ns maximum access times ava...

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