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Part Number
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STW23NM60ND |
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Manufacturer
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STMicroelectronics |
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Description
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N-channel Power MOSFET |
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Published
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Jan 4, 2009 |
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Detailed Description
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STW23NM60ND
Datasheet
N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package
Features
Order...
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Datasheet
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STW23NM60ND
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Overview
STW23NM60ND
Datasheet
N-channel 600 V, 0.
150 Ω typ.
, 19.
5 A, FDmesh II Power MOSFET in a TO-247 package
Features
Order code
VDS @ TJ max
RDS(on) max.
ID
t(s) 3 c 2
1
du TO-247 lete Pro D(2, TAB)
STW23NM60ND
650 V
• Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness
Applications
• Switching applications
0.
180 Ω
19.
5 A
bso G(1) t(s) - O S(3)
AM01475v1_noZen
Description
This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology.
Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance.
It ...
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