Part Number
|
SIHFZ10 |
Manufacturer
|
Vishay Siliconix |
Description
|
Power MOSFET |
Published
|
Jan 10, 2009 |
Detailed Description
|
Power MOSFET
IRFZ10, SiHFZ10
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
60
RDS(on) ()
VGS = 10 V
Qg (Max.) (nC) Qg...
|
Datasheet
|
SIHFZ10
|
Overview
Power MOSFET
IRFZ10, SiHFZ10
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
60
RDS(on) ()
VGS = 10 V
Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
11 3.
1 5.
8 Single
0.
20
TO-220AB
D
S D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220AB package is universally preferr...
Similar Datasheet