DISCRETE SEMICONDUCTORS
DATA SHEET
M3D159
LLE18040X
NPN microwave power
transistor
Product specification Supersedes data of September 1994 1999 Apr 22
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input prematching ensures good stability and allows an easier design of wideband circuits.
APPLICATION ...