M29W160ET M29W160EB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ SUPPLY VOLTAGE www.
DataSheet4U.
com– VCC = 2.
7V to 3.
6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks ■ PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ■ ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend ■ UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming ■ TEMPORARY BLOCK UNPROTECTION MODE ■ COMMON FLASH INTERFACE – 64 bit Security Code ■ LOW POWER CONSUMPTION – Standby and Auto...

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