Part Number
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TC55V16256JI-12 |
Manufacturer
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Toshiba Semiconductor |
Description
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MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
Published
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Jan 18, 2009 |
Detailed Description
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TC55V16256JI/FTI-12,-15
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT CMOS STATIC RAM...
|
Datasheet
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TC55V16256JI-12
|
Overview
TC55V16256JI/FTI-12,-15
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION
The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.
3 V power supply.
Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access.
Data byte control signals ( LB , UB ) provide lower and upper byte access.
This device is well suited to cache memory applications where high-speed access and high-speed storage are ...
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