HN7G02FU
TOSHIBA Multi Chip Discrete Device
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HN7G02FU
Unit: mm
Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
Q1 (
transistor): RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent
Q1 (
Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −5 −100 Unit V V V mA
Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA
JEDEC JEITA TOSHIBA Weight...