| Part Number | 2SA650 |
| Manufacturer | SavantIC |
| Title | Silicon POwer Transistors |
| Description | ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Ba... |
| Features |
B=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-150V; IE=0 VEB=-6V; IC=0 IC=-2A ; VCE=-5V IE=0; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V
-150
V
Collector-base breakdown voltage
-150
V
Emitter-base breakdown voltage
-6
V
Collector-emitter saturation voltage
-2.0
V
Base-emit...
|
| File Size | 135.73KB |
| Datasheet |
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2SA650 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CH.
2SA651 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHA.
2SA652 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Contunuous Collector Current IC= -1A ·Power DissipationPC= 15W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.0 A PC Collector Power Dissipation@TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA652 isc website：www.iscse.
2SA653 : ·With TO-66 package ·High voltage: VCEO=-120V(min) APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -150 -120 -6 -1.0 15 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARAC.
2SA653 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Contunuous Collector Current IC= -1A ·Power Dissipation PC= 15W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.0 A PC Collector Power Dissipation@TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA653 isc website： www.isc.
2SA656 : ·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC519 APPLICATIONS ·For audio frequency and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -130 -130 -5 -7 50 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERIS.
2SA656 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min.) ·Complement to Type 2SC519 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -2 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com .
2SA656A : SILICON PNP TRIPLE DIFFUSED MAS TYPE POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. 2SA656A 2SA657A 12SA658A1 INUUS'l'KlAL ArFLIUAilUNS Unit in mm 35.0 MAX. FEATURES . High Voltage : VcBO=-130V, Vceo=-HOV (2SA656A) • Complementary to 2SC519A, 2SC520A and 2SC521A. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SA656A 2SA657A 2SA658A v CBO CollectorEmitter Voltage 2SA656A 2SA657A 2SA658A Emitter-Base Voltage Collector Current v CEO vEBO ic RATING -130 -100 -70 -110 -80 -50 -5 -7 UNIT V V V A 1. BASE 2, EMITTER COLLECTOR (CASE) J ED EC TO-3 TC-3, TB-3 TOSHIBA Z-21A1A Mounting Kit No..
2SA657 : ·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC520 APPLICATIONS ·For audio frequency and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -7 50 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERIS.
2SA657 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Complement to Type 2SC520 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -2 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1.
2SA657A : SILICON PNP TRIPLE DIFFUSED MAS TYPE POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. 2SA656A 2SA657A 12SA658A1 INUUS'l'KlAL ArFLIUAilUNS Unit in mm 35.0 MAX. FEATURES . High Voltage : VcBO=-130V, Vceo=-HOV (2SA656A) • Complementary to 2SC519A, 2SC520A and 2SC521A. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SA656A 2SA657A 2SA658A v CBO CollectorEmitter Voltage 2SA656A 2SA657A 2SA658A Emitter-Base Voltage Collector Current v CEO vEBO ic RATING -130 -100 -70 -110 -80 -50 -5 -7 UNIT V V V A 1. BASE 2, EMITTER COLLECTOR (CASE) J ED EC TO-3 TC-3, TB-3 TOSHIBA Z-21A1A Mounting Kit No..
2SA658 : ·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC521 APPLICATIONS ·For audio frequency and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -70 -70 -5 -7 50 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTI.
2SA658 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Complement to Type 2SC521 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -2 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 .
2SA658A : SILICON PNP TRIPLE DIFFUSED MAS TYPE POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. 2SA656A 2SA657A 12SA658A1 INUUS'l'KlAL ArFLIUAilUNS Unit in mm 35.0 MAX. FEATURES . High Voltage : VcBO=-130V, Vceo=-HOV (2SA656A) • Complementary to 2SC519A, 2SC520A and 2SC521A. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SA656A 2SA657A 2SA658A v CBO CollectorEmitter Voltage 2SA656A 2SA657A 2SA658A Emitter-Base Voltage Collector Current v CEO vEBO ic RATING -130 -100 -70 -110 -80 -50 -5 -7 UNIT V V V A 1. BASE 2, EMITTER COLLECTOR (CASE) J ED EC TO-3 TC-3, TB-3 TOSHIBA Z-21A1A Mounting Kit No..
2SA659NP : .