www.
DataSheet4U.
com
STH12NA60/FI STW12NA60
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE STH12NA60 STH12NA60FI STW12NA60
s s s s s s s
V DSS 600 V 600 V 600 V
R DS( on) 0.
6 Ω 0.
6 Ω 0.
6 Ω
ID 12 A 7A 12 A
TO-247
TYPICAL RDS(on) = 0.
44 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-218
1
3 2 1
3
3 2
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled rug...