Part Number
|
RJK0329DPB |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N Channel Power MOS FET Power Switching |
Published
|
Feb 15, 2009 |
Detailed Description
|
www.DataSheet4U.com
RJK0329DPB
Silicon N Channel Power MOS FET Power Switching
REJ03G1638-0400 Rev.4.00 Apr 10, 2008
F...
|
Datasheet
|
RJK0329DPB
|
Overview
www.
DataSheet4U.
com
RJK0329DPB
Silicon N Channel Power MOS FET Power Switching
REJ03G1638-0400 Rev.
4.
00 Apr 10, 2008
Features
High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.
8 mΩ typ.
(at VGS = 10 V) • Pb-free • • • • •
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage t...
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