www.
DataSheet4U.
com
RJK0384DPA
Silicon N Channel Power MOS FET with
Schottky Barrier Diode High Speed Power Switching
REJ03G1724-0101 Preliminary Rev.
1.
01 Jul 10, 2008
Features
• • • • • Low on-resistance Capable of 4.
5 V gate drive High density mounting Pb-free Halogen-free
Outline
WPAK
2 3 4 D1 D1 D1 9 S1/D2
5 6 7 8
1 G1
8 G2
9
S2 S2 S2 6 7 5
4 3 2 1
MOS1
MOS2 + SBD
Absolute Maximum Ratings
(Ta = 25°C)
Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Pch Note3 Tch Ts...