Power F-MOS FETs 2SK3048 www.
DataSheet4U.
com Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.
9±0.
3 4.
6±0.
2 2.
9±0.
2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.
0±0.
5 φ3.
2±0.
1 13.
7±0.
2 4.
2±0.
2 1.
4±0.
2 1.
6±0.
2 0.
8±0.
1 3.
0±0.
5 2.
6±0.
1 0.
55±0.
15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 600 ±30 ±3 ±6 22.
5 35 2 150 −55 to +150 Unit V V A A m...

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