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2STA1694
High power
PNP epitaxial planar bipolar
transistor
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC
3 2 1
Applications
■
Audio power amplifier
TO-3P
Description
The device is a
PNP transistor manufactured using new BiT-LA (Bipolar
transistor for linear amplifier) technology.
The resulting
transistor shows good gain linearity behaviour.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking 2STA1694 Package TO-3P Packaging Tube
Order code 2STA1694
May 2008
Rev 2
1/7
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Electrical ratings
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2STA1694
1
Elec...