2SB1286

2SB1282 : SHINDENGEN Darlington Transistor 2SB1282 (TP4J10) •} 4A PNP OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS •œAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage TemperatureTstg -55•`+150 •Ž Junction TemperatureTj +150 •Ž Collector to Base Voltage V -100 V CBO Collector to Emitter Voltage V -100 V CEO Emitter to Base Voltage V -7 V EBO Collector Current DCI -+4 A C Collector Current Peak I -+6 A CP Base Current DC I -0.3 A B Base Current Peak I -0.5 A BP Total Transistor Dissipation P Tc = 25•Ž 25 W T Dielectric Strength Vdis Terminals to case AC21 minute kV Mounting Torque TOR (Recommended torque 0.5: 0.3N¥m•j N¥m •œElectrical Characteristics (Tc=25•Ž) Item Symbol C.

2SB1283 : SHINDENGEN Darlington Transistor 2SB1283 (TP7J10) - 7 A PNP OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS •œAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage TemperatureTstg -55•`+150 •Ž Junction TemperatureTj +150 •Ž Collector to Base Voltage V -100 V CBO Collector to Emitter Voltage V -100 V CEO Emitter to Base Voltage V -7 V EBO Collector Current DCI -7 A C Collector Current Peak I -10 A CP Base Current DC I -0.5 A B Base Current Peak I -1 A BP Total Transistor Dissipation P Tc = 25•Ž 30 W T Dielectric Strength Vdis Terminals to case AC21 minute kV Mounting Torque TOR (Recommended torque 0.5: 0.3N¥m•j N¥m •œElectrical Characteristics (Tc=25•Ž) Item Symbol Cond.

2SB1283 : ·High DC Current Gain- : hFE= 1500(Min.)@IC= -3A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak -100 V -100 V -7 V -7 A -10 A IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A .

2SB1284 : SHINDENGEN Darlington Transistor 2SB1284 (TP10J10) - 1 0 A PNP OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS •œAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage TemperatureTstg -55•`+150 •Ž Junction TemperatureTj +150 •Ž Collector to Base Voltage V -100 V CBO Collector to Emitter Voltage V -100 V CEO Emitter to Base Voltage V -7 V EBO Collector Current DCI -10 A C Collector Current Peak I -15 A CP Base Current DC I -0.8 A B Base Current Peak I -1.5 A BP Total Transistor Dissipation P Tc = 25•Ž 35 W T Dielectric Strength Vdis Terminals to case AC21 minute kV Mounting Torque TOR (Recommended torque 0.5: 0.3N¥m•j N¥m •œElectrical Characteristics (Tc=25•Ž) Item Symbo.

2SB1284 : ·High DC Current Gain- : hFE= 1500(Min.)@IC= -5A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak -100 V -100 V -7 V -10 A -15 A IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.8 A.

2SB1285 : SHINDENGEN Darlington Transistor 2SB1285 (T15J10) -15A PNP OUTLINE DIMENSIONS Case : MTO-3P Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Mounting Torque Symbol Tstg Tj VCBO VCEO VEBO IC ICP IB IBP PT TOR Conditions Tc = 25℃ (Recommended torque : 0.5N･m） Ratings -55～ +150 +150 -100 -100 -7 -1 5 -22 -1 -2 100 0.8 Ratings Max -0.1 Max -0.1 Max -5 Min 1,500 Max 15,000 Max -1.5 Max -2.0 Max 1.25 TYP 20 Max 1 Max 4 Max 2 Unit ℃ ℃ V V V A A A A W N ･m Unit mA mA .

2SB1286 : ·High DC Current Gain- :hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A ·Complement to Type 2SD1646 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak PC Collector Power Dissipation TC=25℃ Tj Junction Tempe.

2SB1287 : ·High DC Current Gain- :hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A ·Complement to Type 2SD1765 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A Collector Power Dissipation Ta=25℃ 2 PC W Colle.

2SB1287 : ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1765 ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -8 -2 -3 2 W UNIT V V V A A SavantIC Semiconductor www..

2SB1288 : Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 5.0±0.2 4.0±0.2 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –30 –20 –7 –10 –5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. Allowing supply with the radial taping. 0.7±0.1 .

2SB1289 : ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1580 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc websi.

2SB1289 : With TO-220C package ·Complement to type 2SD1580 ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE -80 -80 -5 -7 .