| Part Number | 2SC1567A |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-126 package ·Complement to type 2SA794/794A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency high power driver app... |
| Features |
cified PARAMETER CONDITIONS
2SC1567 2SC1567A
SYMBOL
MIN
TYP.
MAX
UNIT
2SC1567 V(BR)CEO Collector-emitter breakdown voltage 2SC1567A IC=0.1mA ;IB=0
100 V 120
V(BR)EBO
Emitter-base breakdown voltage
IE=1µA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=0.5A ;IB=50m A
0.2
0....
|
| File Size | 132.15KB |
| Datasheet |
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2SC1567 : Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Complementary to 2SA0794, 2SA0794A φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage 2SC1567 VCBO 100 V n d stag tinue (Emitter open) 2SC1567A 120 a e cle con Collector-emitter voltage 2SC1567 VCEO 100.
2SC1567 : ·With TO-126 package ·Complement to type 2SA794/794A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency high power driver applications ·Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SC1567 VCBO Collector-base voltage 2SC1567A 2SC1567 VCEO Collector- emitter voltage 2SC1567A VEBO IC ICM PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 120 5 0.5 1 1.2 150 -55 +150 V A A W Open emitter 120 10.
2SC1567 : ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SA794 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency high power driver. ·Optimum for the driver stage of low-frequency and 40W to 100W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.5 A ICP Collector Current-Peak PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 1.2 W 150 ℃ Tstg Storage Temperature.
2SC1567A : Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Complementary to 2SA0794, 2SA0794A φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage 2SC1567 VCBO 100 V n d stag tinue (Emitter open) 2SC1567A 120 a e cle con Collector-emitter voltage 2SC1567 VCEO 100.