CYStech Electronics Corp.
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Spec.
No.
: C208N3-H Issued Date : 2003.
06.
06 Revised Date : Page No.
: 1/4
General Purpose
NPN Epitaxial Planar
Transistor
BTN5551N3
Description
The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage.
(BVCEO=160V @ IC=1mA) • Complement to BTP5401N3
Symbol
BTN5551N3
Outline
SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 ...