CYStech Electronics Corp.
com
Spec.
No.
: C209N3-H Issued Date : 2003.
06.
12
Revised Date : Page No.
: 1/4
General Purpose
NPN Epitaxial Planar
Transistor
BTNA42N3
Description
• High breakdown voltage.
(BVCEO=300V) • Low collector output capacitance.
(Typ.
3pF at VCB =30V) • Ideal for chroma circuit.
Symbol
BTNA42N3
Outline
SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits 300 300 6 500 225 (Note) 556 150 -55...