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STP6NA60 STP6NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE STP6NA60 STP6NA60FI
s s s s s s s
VDSS 600 V 600 V
R DS(on) 1.
2 Ω 1.
2 Ω
ID 6.
5 A 3.
9 A
TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220
3 1 2
3 1 2
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
AP...