isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:VCEO= 60V(Min) ·DC Current Gain-
: hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·TV Horizontal Deflection Output Application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipati...