Advance Technical Information TM com PolarHT Power MOSFET IXTQ 110N10P IXTT 110N10P VDSS ID25 RDS(on) = 100 = 110 = 15 V A mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 V V V A A A A mJ J V/ns TO-3P (IXTQ) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 110 75 250 60 40 1.
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+150 G D S (TAB) TO-268 (IXTT) G S D = Drain TAB = Drain W °C °C...

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