TP5322 TP5322
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Initial Release
P-Channel Enhancement-Mode Vertical DMOS FET
General Description
These low threshold enhancement-mode (normally-off)
transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process.
This combination produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying appl...