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PD -95965
IRG4BC20FD-SPbF
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package • Lead-Free • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs .
Minimized recovery characte...