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PD - 94906
IRG4BC20FDPbF
Features
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free
C
Fast CoPack IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
66V
@VGE = 15V, IC = 9.
0A
n-channel
Benefits
Absolute Maximum Ratings
V CES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM ...