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CMBT5550

Part Number CMBT5550
Manufacturer CDIL
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Published Apr 20, 2009
Detailed Description www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 ...
Datasheet CMBT5550




Overview
www.
datasheet4u.
com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25°C Collector–emitter saturation voltage IC = 50 mA; IB = 5 mA D.
C.
current gain IC = 10 mA; VCE = 5 V RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter...






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